性别

男

导师类型

博导

职称

教授

所属学院

电气工程与自动化学院

Email

dumx@tjut.edu.cn; dumx@email.tjut.edu.cn

学术兼职

天津市电源学会副理事长；天津市电机工程学会常务理事。

招生专业

0808电气工程（博）；0858能源动力（专博）

080800电气工程（学硕）、085801电气工程（专业学位）、085400电子信息（控制工程）

研究方向

电力电子器件可靠性理论及状态监测技术；电力电子系统控制策略、可靠性、电磁兼容。

代表性学术成果：

主持/参与的部分科研项目：

[1]国家重点研发计划子课题：智能电动汽车电子电气架构研发（主持）

[2]天津市自然科学基金重点项目：考虑电磁干扰特性的电力电子器件老化建模及监测方法研究（主持）

[3]天津市自然科学基金：计及老化和多热源耦合的功率器件热可靠性关键问题研究（主持）

[4]天津市技术创新引导专项(基金)：基于数字孪生技术的电机控制器及其功率器件的老化监测方法（主持）

[5]天津市智能制造专项项目:智能网联环卫车T-Box终端应用技术（主持）

[6]国家重点实验室开放基金：计及EMI及热耦合影响的功率器件可靠性研究（主持）

[7]企业委托课题：功率器件可靠性理论及状态监测算法和装置（主持）

[8]企业委托课题：直流充电桩多功能型绝缘安全监控集成装置的研发（主持）

[9]企业委托课题：1000V超宽输入高压直流变换器（主持）

[10]企业委托课题：新能源汽车关键部件的EMC技术研究（主持）

[11]企业委托课题：物联网云技术与状态监测融合机制在电梯制动器及门系统安全运行方面的应用（主持）

[12]国家863项目：电动汽车充电设备电气检测技术及标准研究（参与）

[13]国家863项目：纯电驱动动力平台电磁兼容分析与测试评价技术（参与）

[14]企业委托课题：混合动力汽车电机控制器系统开发（参与）

[15]企业委托课题：电动汽车动力电池实验装置及电磁兼容系统开发（参与）

[16]企业委托课题：电池管理系统控制电路检测装置（参与）

[17]国家自然科学基金项目：典型功率变换器故障预报与诊断机理研究（参与）

[18]天津市科技支撑重点项目：高效变流系统关键技术理论与试验研究（参与）

[19]国家863项目：长安小型纯电动轿车研发（参与）

[20]天津市自然科学基金项目：基于正弦电流控制的集成功率变流器的研究（参与）

主持/参与的部分教改项目：

[1]天津市教改重点项目子课题：“三全育人”视域下专业思政体系化建设研究与实践（主持）

[2]天津市高等学校研究生教育改革研究计划项目重点项目子课题：强国建设背景下地方高校电子信息专业学位卓越工程人才培养模式研究（主持）

[3]天津市教改重点项目子课题：专业认证背景下高校机电类专业可衡量的非技术工程能力培养与实践（主持）

[4]青软创新科技集团股份有限公司：校企联合产学合作协同育人新工科、新医科、新农科、新文科建设项目（主持）

[5]天津市教改重点项目子课题：产教融合的机械类专业工程教育认证实践基地建设研究与工程能力培养实践（参与）

[6]电机控制与应用天津市教学团队

[7]天津市创新创业教育特色示范课程《电机与拖动》

部分正刊论文：

[1]Sai Gao, Shaoxiang Wang, Jianxiong Yang, Mingxing Du. The Influence of Bond Wire Aging   on DM EMI Noise in IGBT Converters Considering High-Frequency Ringing[J]. IEEE Transactions on   Device and Materials Reliability, 2025, Early Access Article, DOI: 10.1109/TDMR.2025.3548979.

[2]Jianxiong Yang, Li Ran, Yanbo Che, Mingxing Du.In-situ Monitoring of Maximum and Average Chip Junction Temperature   within Multichip IGBT Power Modules Using Kelvin Emitter Voltage[J]. IEEE Journal of   Emerging and Selected Topics in Power Electronics, 2025, Early Access Article, DOI: 10.1109/JESTPE.2025.3554564.

[3]Mingxing Du, Shaoxiang Wang,  Jianxiong Yang, Jinliang Yin.In-situ Monitoring Bonding Wires Fatigue in IGBT Power Modules Using   Differential Mode Impedance Extracted From Dual Current Probe Technology[J]. IEEE Transactions on   Instrumentation and Measurement, 2025, Early Access Article, DOI: 10.1109/TIM.2025.3551980.

[4]Mingxing   Du, Fan Liu, Jinliang Yin, Ziwei Ouyang. Junction Temperature Correction Method for SiC   MOSFET Based on Turn-off Oscillation Frequency of Drain-Source Voltage[J].   IEEE Transactions on Electron Devices, 2024,71(10):6208-6215. DOI10.1109/TED.2024.3438673

[5]Huang Xiyuan, Du Mingxing, Fu Hongze, Gao Sai. An   Aging Monitoring Method of Bond Wires Based on Voltage Ringing Frequency   Characteristics in IGBT Modules[J]. IEEE Transactions on Device and Materials   Reliability, 2024, 24(2):344-353. DOI10.1109/TDMR.2024.3394517

[6] Yan Qing, Li Aoyang, Wang Gengji, Yin Jinliang, Du Mingxing. Two-Branch   Coupling Cauer Model in IGBT Module Considering FWD Thermal Coupling   Effect[J]. IEEE Transactions on Components Packaging and Manufacturing   Technology, 2024, 14(5):912-920. DOI10.1109/TCPMT.2024.3382631

[7]Gao Sai, Ren Zhihui, Du Mingxing,   Chu Chengpeng, Yin Jinliang. Monitoring Void Fatigue in Solder Layer of IGBT   Module Based on Common Mode Interference Spectrum[J]. IEEE Transactions on   Components Packaging and Manufacturing Technology, 2024, 14(1):148-156. DOI10.1109/TCPMT.2023.3342617

[8]Sai Gao, Yulin Liu,   Gengji Wang, Jinliang Yin, Mingxing Du. Study on the influence mechanism of   gate oxide degradation on DM EMI Signals in SiC MOSFET[J]. Microelectronics   Journal, 2024, 154: 106460. doi.org/10.1016/j.mejo.2024.106460

[9] Huang Xiyuan, Sun Xiepeng, Wang Gengji,   Yin Jinliang, Du Mingxing. Monitoring method of solder layer void damage of   IGBT module based on transfer function[J]. IEICE Electronics Express, 2024, 21(12):20240243. DOI10.1587/elex.21.20240243

[10]刘雪庭,杜明星,马格,等.基于双分支Cauer模型的IGBT模块焊料层老化监测方法[J].太阳能学报,2024,45(02):336-341.DOI:10.19912/j.0254-0096.tynxb.2022-1544.

[11] 严庆,杜明星,胡经纬,等.基于改进双支耦合Cauer模型的逆变器中IGBT模块结温预测方法[J].太阳能学报,2024,45(10):431-439.DOI:10.19912/j.0254-0096.tynxb.2023-0871.

[12]韦虎俊,尹金良,等.基于EMR与V_{eE_peak}组合电参数的IGBT模块封装老化监测[J].太阳能学报,2024,45(11):1-8.DOI:10.19912/j.0254-0096.tynxb.2023-1028.

[13]王兆萍,信金蕾,杜明星.混合热网络模型的构建及其结温估计方法[J].电源学报,2024,22(03):30-37.DOI:10.13234/j.issn.2095-2805.2024.3.30.

[14]李亚辉,杜明星.基于集射电压频谱的IGBT老化状态解耦方法[J/OL].电源学报,1-17[2024-12-09].http://kns.cnki.net/kcms/detail/12.1420.TM.20241101.1713.002.html.

[15]李澳阳,信金蕾,杜明星.计及动态热扩散边界形变和偏移特性的Cauer模型优化方法[J/OL].电源学报,1-11[2024-12-09].http://kns.cnki.net/kcms/detail/12.1420.TM.20240813.1428.004.html.

[16]Jianxiong Yang, Yanbo Che, Li   Ran, Borong Hu, Mingxing   Du. In-Situ Monitoring Solder Layer Degradation in Multichip IGBT Power   Modules Using  Auxiliary Emitter   Voltage [J]. IEEE Transactions on Power Electronics.2024,   39(10):13744-13757.

[17]Jingwei Hu, Mingxing   Du. Parameter extraction method for Cauer model considering dynamic   thermal diffusion boundaries in IGBT module [J]. Microelectronics Journal, January 2023, 131:105643.

[18] Mingxing Du, GuixuYang, Zhihui Ren, Chengpeng Chu. Degradation   monitoring of SiC MOSFET gate-oxide based on differential mode conducted   interference spectrum[J]. Microelectronics   Reliability, January 2023, 140:114866.

[19] Fan Liu,Mingxing Du,   Jinliang Yin, Ziwei Ouyang. Correction Method for Calculating Junction   Temperature Considering parasitic effect in SiC MOSFET[J]. Journal of Power   Electronics, November 2023, 23:688–699. DOI:10.1007/s43236-022-00562-3.

[20]杜明星，边维国,欧阳紫威.考虑寄生电感的SiC MOSFET半桥电路串扰峰值预测方法[J].太阳能学报,2023,44(01):16-23.

[21]杜明星,信金蕾,姚婉荣,等.计及热电耦合效应的SiC   MOSFET阈值电压精确监测方法[J].太阳能学报,2023,44(02):445-452.DOI:10.19912/j.0254-0096.tynxb.2021-1124.

[22]杜明星,边维国,欧阳紫威.考虑寄生电感的SiC   MOSFET半桥电路串扰峰值预测方法[J].太阳能学报,2023,44(01):16-23.DOI:10.19912/j.0254-0096.tynxb.2021-0824.

[23]刘兴瑜,杜明星,尹金良,等.一种并联SiC MOSFETs的静态均流方法[J].太阳能学报,2023,44(07):147-154.DOI:10.19912/j.0254-0096.tynxb.2022-0433.

[24] Zhihui Ren, Mingxing Du, Jinliang Yin, and Ziwei Ouyang. Aging   Monitoring of Bond Wires Based on EMR Signal Spectrum Characteristics for   IGBT Module[J]. Progress In Electromagnetics   Research, 2022, Vol. 174, 115-125.

[25] Jinlei Xin, Mingxing Du, Ziwei Ouyang, Kexin Wei. Online Monitoring   for Threshold Voltage of SiC MOSFET Considering the Coupling Impact on BTI   and Junction Temperature[J]. IEEE   Transactions on Electron Devices. 2021, 68(4): 1772-1777.

[26] Chengpeng Chu, Mingxing Du, Xuesong Zhou, Ziwei Ouyang. Aging   Monitoring of Bond Wires Based on Differential Mode Conducted Interference   Spectrum for IGBT Module[J].IEEE   Transactions on Electromagnetic Compatibility. 2021, 63(4): 1274-1283.

[27] Mingxing Du,Jinlei Xin,Hongbin Wang,Ziwei Ouyang, KexinWei. Bond   wire lift-off monitoring based on intersection point movement characteristic   in IGBT module[J]. Microelectronics Journal. 2021,116:105202.

[28] Jianxiong Yang,Yanbo Che,Li Ran,Mingxing Du,Huaping Jiang,Muzixiang   Xiao. Monitoring Initial Solder Layer Degradation in a Multichip IGBT Module  via Combined TSEPs[J].IEEE Transactions   on Device and Materials Reliability.2022, 22(1): 26-35.

[29] Chengpeng Chu, Jing Hu, Mingxing Du, Ziwei Ouyang. Aging Monitoring Method of Bond Wires-Based on Phase-Frequency Characteristics of Differential   Mode Conducted Interference Signal for IGBT Module[J]. IEEE Transactions on Device and Materials Reliability. 2021,21(4): 639-646.

[30] Mingxing Du, Jinlei Xin, Hongbin Wang, Ziwei Ouyang. Aging Diagnosis   of Bond Wire Using On-State Drain-Source Voltage Separation for SiC   MOSFET[J]. IEEE Transactions on Device   and Materials Reliability. 2021, 21(1):   41-47.

[31]Du Mingxing,Li Yang, Dai Qiqi, Ouyang Ziwei. An online extraction method of noise source   impedance based on network analyzer[J]. Progress in Electromagnetics Research Letters. 2021, 94(2021):35-43.

[32] Du Mingxing, Bian Weiguo, Wang Hongbin, DaiQiqi, Ouyang Ziwei. Research on conducted emi characteristics of sic   mosfet considering temperature effect[J]. Progress in Electromagnetics Research Letters. 2021, 94(2021):35-43.

[33]Wenbai Wang, Mingxing Du, Kexin Wei. Rapid Torque Rising of PMSM by Directly Chasing   Rotating Flux Linkage Vector[J]. IEEE Journal of Emerging   and Selected Topics in Power Electronics. 2020, 9(4): 4384 - 4394.

[34] Mingxing Du, Jinlei Xin, Hongbin Wang, Ziwei Ouyang and Kexin Wei.   Estimating Junction Temperature of SiC MOSFET Using Its Drain Current During   Turnon Transient[J]. IEEE Transactions   on Electron Devices. 2020, 67(5): 1911-1918.

[35]Lei Jing, Mingxing Du, Kexin Wei, William Gerard Hurley. An Improved Behavior   Model for IGBT Modules Driven by Datasheet and Measurement[J].IEEE Transactions on Electron Devices, 2020, 67(1): 230-236.

[36] Mingxing   Du, Qiuya Guo, Hongbin Wang, Ziwei Ouyang, Kexin Wei. An Improved Cauer Model   of IGBT Module:Inclusive Void Fraction in Solder Layer[J]. IEEE Transactions on Components, Packaging   and Manufacturing Technology. 2020, 10(8):1401-1410.

[37]Mingxing   Du, Yuxiao Zhang, Hongbin Wang, Ye Tian, Ziwei Ouyang, and Kexin Wei. An Improved Calculation Method for Static   Capacitance in Inductor Windings [J]. Progress   In Electromagnetics Research C, 2020,Vol.104:25-36.

[38] Mingxing Du, Yang Li, Hongbin Wang, Ziwei Ouyang, and Kexin Wei. An Online Measurement Method for Noise-Source   Impedance of Electrical Equipment[J]. Progress   In Electromagnetics Research C, 2020,Vol.100:95-103.

[39]Han Chen, Mingxing Du. Analysis of the Effect of Temperature on the Wideband Characteristics of   EMI Filters [J]. Progress In   Electromagnetics Research Letters, 2020, Vol. 91, 67-75.

[40] Jiangyong Zhang, Mingxing Du, Lei Jing, Kexin Wei, William Gerard   Hurley. IGBT Junction Temperature Measurements: Inclusive of Dynamic Thermal   Parameters[J]. IEEE Transactions on Device and Materials Reliability, 2019, 19(2): 333-340.

[41] Mingxing Du, Qingyi Kong, Ziwei Ouyang, Kexin Wei, William G. Hurley. Strategy for   Diagnosing the Aging of an IGBT Module by ON-State Voltage Separation [J]. IEEE Transactions on Electron Devices,2019, 66(11): 4858-4864.

[42] Lei Jing, Mingxing Du, Kexin Wei, William Gerard Hurley. A Health Monitoring   Method for Bond Wires in IGBT Modules Based on Voltage Ringing   Characteristics[J]. IEEE Transactions on Electron Devices, 2019, 66(9): 3953-3960

[43] Mingxing Du, Yu Tang, Mengchao Gao, Ziwei Ouyang,   Kexin Wei, William Gerard Hurley. Online Estimation of the Junction   Temperature Based on the Gate Pre-Threshold Voltage in High-Power IGBT   Modules[J]. IEEE Transactions on Device and Materials   Reliability, 2019, 19(3): 501-508.

[44] Kexin Wei, Wenbai Wang, Zhen Hu, Mingxing Du.   Condition Monitoring of IGBT Modules Based on Changes of Thermal Characteristics[J]. IEEE Access, 2019, 7:47525-47534.

[45] Zhen Hu, Mingxing Du, Kexin Wei, William Gerard Hurley. An Adaptive Thermal Equivalent   Circuit Model for Estimating the Junction Temperature of IGBT[J]. IEEE Journal of Emerging and Selected   Topics in Power Electronics, 2019, 7 (1):392-403.

[46] Du Mingxing, Zhang Xing, Wei Kexin, Hurley William Gerard. An alternative method  for conducted immunity tests using multiple CDNs[J].IEEE Electromagnetic Compatibility Magazine,2019, 8(1):54-58.

[47] Mingxing   Du, Qiuya Guo, Ziwei Ouyang, Kexin Wei, William Gerard Hurley. Effect of   solder layer crack on the thermal reliability of Insulated Gate Bipolar   Transistors[J].Case Studies in Thermal   Engineering, 2019, 14:100492.

[48] Du Mingxing, Zhang Xing, Wei Kexin, Hurley William Gerard. An alternative method  for conducting immunity tests in the industrial environment[J]. IEEE Electromagnetic Compatibility Magazine,2018, 7(3):46-50.

[49] Zhen Hu,   Mingxing Du, Kexin Wei. Online Calculation of the Increase in Thermal   Resistance Caused by Solder Fatigue for IGBT Modules[J]. IEEE Transactions on Device and Materials Reliability, 2017,   17(4):785-794.

部分会议论文：

[1] Jinbo Yang, Mingxing Du, Cong Zhang, Gengji Wang. Adaptive Regression   Approach of Equivalent Factor for Equivalent Consumption Minimization   Strategy [C]. 2024 IEEE 25th China Conference on System Simulation Technology   and its Application (CCSSTA), Tianjin, China, 2024

[2] Jinlei Xin,Lei Zheng,Qiqi Dai,Mingxing Du,Ziwei Ouyang,Enfei Zhou.   Threshold Voltage Monitoring Method for SiC MOSFET Based on Body Diode   Voltage under Body Effect[C].2021 IEEE 4th International Electrical and   Energy Conference (CIEEC),Wuhan,China,2021

[3] Sanqiang Li, Mingxing Du. Extraction of parasitic parameters of IGBT   module based on three - stage method[C]. 2018 Chinese Control and Decision   Conference (CCDC), Shenyang, China, 2018.

[4]Yuan Liu, Yi Dou, Mingxing Du, Kexin Wei, Hurley Gerard, Michael A. E.   Andersen, Ziwei Ouyang. High Frequency Wide Output Range Boost-Flyback   Converter with Zero Voltage Switching[C]. 2018 IEEE International Power   Electronics and Application Conference and Exposition (PEAC), 2018, Shenzhen,   China.

[5] Juan Li, Mingxing Du, Xing Zhang, Kexi Wei. A Conducted Immunity Test   Method Based on Electromagnetic Clamp Injection[C]. 2018 37th Chinese Control   Conference (CCC), Wuhan, China.

部分专利：

[1]杜明星等.一种IGBT模块内部键接线故障监测系统及其工作方法，2012，CN102981098B（授权发明专利）

[2]杜明星等.一种有源门极控制电路,   2016，中国，CN201620809077.8（授权实用新型）

[3]杜明星等. 一种有源门极控制电路及其IGBT电磁干扰抑制方法, 2016,  CN201610608924.9（实审发明专利）

[4]杜明星等. 一种工业环境下的回路阻抗的测试设备及传导抗扰度测试方法，2018，CN201810112643.3（实审发明专利）

[5]杜明星等. 一种PMSM的可拓展电压空间矢量输出的FCS-MPDTC控制系统及方法，2019，CN201910625376.4（授权发明专利）

[6]杜明星等. 一种基于电流能量考虑逆变器功率器件老化状态的在线监测方法，2022，CN202210141095.3（实审发明专利）

[7]杜明星等. 一种基于线电压考虑逆变器功率器件老化状态的在线监测方法，2022，CN202210140681.6（实审发明专利）

部分获奖

[1] “大型输气管道高可靠性安全供电技术”获2016年度中国石油和化工自动化应用协会科技进步二等奖。

[2] “无线电能安全高效双向传输关键技术、核心设备与产业化” 获2024年度第十届中国电源学会科学技术奖二等奖。