代表性学术成果： 主持/参与的部分科研项目： [1]国家重点研发计划子课题：智能电动汽车电子电气架构研发 [2]天津市自然科学基金：计及老化和多热源耦合的功率器件热可靠性关键问题研究 [3]天津市技术创新引导专项(基金)：基于数字孪生技术的电机控制器及其功率器件的老化监测方法 [4]天津市智能制造专项项目:智能网联环卫车T-Box终端应用技术 [5]国家重点实验室开放基金：计及EMI及热耦合影响的功率器件可靠性研究 [6]企业委托课题：1000V超宽输入高压直流变换器 [7]企业委托课题：新能源汽车关键部件的EMC技术研究 [8]企业委托课题：物联网云技术与状态监测融合机制在电梯制动器及门系统安全运行方面的应用 [9]国家863项目：电动汽车充电设备电气检测技术及标准研究 [10]国家863项目：纯电驱动动力平台电磁兼容分析与测试评价技术 [11]企业委托课题：混合动力汽车电机控制器系统开发 [12]企业委托课题：电动汽车动力电池实验装置及电磁兼容系统开发 [13]企业委托课题：电池管理系统控制电路检测装置 [14]国家自然科学基金项目：典型功率变换器故障预报与诊断机理研究 [15]天津市科技支撑重点项目：高效变流系统关键技术理论与试验研究 [16]国家863项目：长安小型纯电动轿车研发 [17]天津市自然科学基金项目：基于正弦电流控制的集成功率变流器的研究 主持/参与的部分教改项目： [1] 天津市教改重点项目子课题：专业认证背景下高校机电类专业可衡量的非技术工程能力培养与实践； [2] 青软创新科技集团股份有限公司：校企联合产学合作协同育人新工科、新医科、新农科、新文科建设项目； [3] 天津市教改重点项目子课题：产教融合的机械类专业工程教育认证实践基地建设研究与工程能力培养实践； [4] 电机控制与应用天津市教学团队； [5] 天津市创新创业教育特色示范课程《电机与拖动》。 部分期刊论文（近五年）： [1] Yulin Liu, Mingxing Du, Jinliang Yin, Chao Dong. A parameter self-correcting thermal network model considering IGBT module solder layer aging [J]. Microelectronics Journal, 2023, Vol.134, 105741. [2] Chao Dong, Jingwei Hu, Mingxing Du. Parameter extraction method for Cauer model considering dynamic thermal diffusion boundaries in IGBT module [J]. Microelectronics Journal, January 2023, 131:105643. [3] Mingxing Du, GuixuYang, Zhihui Ren, Chengpeng Chu. Degradation monitoring of SiC MOSFET gate-oxide based on differential mode conducted interference spectrum[J]. Microelectronics Reliability, January 2023, 140:114866. [4] Fan Liu, Mingxing Du, Jinliang Yin, Chao Dong, Ziwei Ouyang. Correction Method for Calculating Junction Temperature Considering parasitic effect in SiC MOSFET[J]. Journal of Power Electronics, 2022, Vol. 23, No. 4, pp. 688-699. [5]杜明星，边维国,欧阳紫威.考虑寄生电感的SiC MOSFET半桥电路串扰峰值预测方法[J].太阳能学报,2023,44(01):16-23. [6]杜明星，信金蕾，姚婉荣，欧阳紫威. 计及热电耦合效应的SiC MOSFET阈值电压精确监测方法[J]. 太阳能学报, 2023, 44(2):445-452. [7] Zhihui Ren, Mingxing Du, Jinliang Yin, Chao Dong, and Ziwei Ouyang. Aging Monitoring of Bond Wires Based on EMR Signal Spectrum Characteristics for IGBT Module[J]. Progress In Electromagnetics Research, 2022, Vol. 174, 115-125. [8]赵相睿,董超,姚婉荣,杜明星.计及磁链和电流的PMSM DTC系统中功率器件键合线老化监测方法[J/OL].电源学报:1-13[2023-04-11].http://kns.cnki.net/kcms/detail/12.1420.tm.20220318.1546.002.html [9]赵泽宇,杜明星.多数据驱动人工神经网络的IGBT结温在线估计方法[J].电子测量与仪器学报,2022,36(07):223-229. [10] Jinlei Xin, Mingxing Du, Ziwei Ouyang, Kexin Wei. Online Monitoring for Threshold Voltage of SiC MOSFET Considering the Coupling Impact on BTI and Junction Temperature[J]. IEEE Transactions on Electron Devices. 2021, 68(4): 1772-1777. [11] Chengpeng Chu, Chao Dong, Mingxing Du, Xuesong Zhou, Ziwei Ouyang. Aging Monitoring of Bond Wires Based on Differential Mode Conducted Interference Spectrum for IGBT Module[J].IEEE Transactions on Electromagnetic Compatibility. 2021, 63(4): 1274-1283. [12] Mingxing Du,Jinlei Xin,Hongbin Wang,Ziwei Ouyang, KexinWei. Bond wire lift-off monitoring based on intersection point movement characteristic in IGBT module[J]. Microelectronics Journal. 2021,116:105202. [13] Jianxiong Yang,Yanbo Che,Li Ran,Mingxing Du,Huaping Jiang,Muzixiang Xiao. Monitoring Initial Solder Layer Degradation in a Multichip IGBT Module via Combined TSEPs[J].IEEE Transactions on Device and Materials Reliability.2021, Early Access Article. [14] Chengpeng Chu, Chao Dong, Jing Hu, Mingxing Du, Ziwei Ouyang. Aging Monitoring Method of Bond Wires-Based on Phase-Frequency Characteristics of Differential Mode Conducted Interference Signal for IGBT Module[J]. IEEE Transactions on Device and Materials Reliability. 2021, 21(4): 639-646. [15] Mingxing Du, Jinlei Xin, Hongbin Wang, Ziwei Ouyang. Aging Diagnosis of Bond Wire Using On-State Drain-Source Voltage Separation for SiC MOSFET[J]. IEEE Transactions on Device and Materials Reliability. 2021, 21(1): 41-47. [16]Du Mingxing,Li Yang, Dai Qiqi, Ouyang Ziwei. An online extraction method of noise source impedance based on network analyzer[J]. Progress in Electromagnetics Research Letters. 2021, 94(2021):35-43. [17] Du Mingxing, Bian Weiguo, Wang Hongbin, DaiQiqi, Ouyang Ziwei. Research on conducted emi characteristics of sic mosfet considering temperature effect[J]. Progress in Electromagnetics Research Letters. 2021, 94(2021):35-43. [18] 郑磊,杜明星.基于重新定义t_(doff)的SiC MOSFET结温估计方法[J].电力电子技术,2021,55(05):153-156. [19] 高孟超,杜明星.功率器件内键合线的宽频特性及传输特性分析[J].电力电子技术,2021,55(05):149-152. [20]李楠,杜明星.基于管理体系标准的实践教学管理体系建设方法研究[J].实验技术与管理,2021,38(11):227-231. [21]王鑫,杜明星,张惊雷.面向新工科的实践类课程教学改革研究——以“工程训练Ⅱ”课程为例[J].中国轻工教育,2021,24(05):1-6+13. [22] Wenbai Wang, Mingxing Du, Kexin Wei. Rapid Torque Rising of PMSM by Directly Chasing Rotating Flux Linkage Vector[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics. 2020, 9(4): 4384 - 4394. [23] Mingxing Du, Jinlei Xin, Hongbin Wang, Ziwei Ouyang and Kexin Wei. Estimating Junction Temperature of SiC MOSFET Using Its Drain Current During Turnon Transient[J]. IEEE Transactions on Electron Devices. 2020, 67(5): 1911-1918. [24] Lei Jing, Mingxing Du, Kexin Wei, William Gerard Hurley. An Improved Behavior Model for IGBT Modules Driven by Datasheet and Measurement[J].IEEE Transactions on Electron Devices, 2020, 67(1): 230-236. [25] Mingxing Du, Qiuya Guo, Hongbin Wang, Ziwei Ouyang, Kexin Wei. An Improved Cauer Model of IGBT Module:Inclusive Void Fraction in Solder Layer[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology. 2020, 10(8):1401-1410. [26] Mingxing Du, Yuxiao Zhang, Hongbin Wang, Ye Tian, Ziwei Ouyang, and Kexin Wei. An Improved Calculation Method for Static Capacitance in Inductor Windings [J]. Progress In Electromagnetics Research C, 2020,Vol.104:25-36. [27] Mingxing Du, Yang Li, Hongbin Wang, Ziwei Ouyang, and Kexin Wei. An Online Measurement Method for Noise-Source Impedance of Electrical Equipment[J]. Progress In Electromagnetics Research C, 2020,Vol.100:95-103. [28] Chao Dong, Han Chen, Mingxing Du. Analysis of the Effect of Temperature on the Wideband Characteristics of EMI Filters [J]. Progress In Electromagnetics Research Letters, 2020, Vol. 91, 67-75. [29] 董超,缪宇辰,杜明星.一种无LISN的传导干扰替代测试方法研究[J].电力电子技术,2020,54(04):137-140. [30]张羽枭,杜明星,王颖丽.基于差模阻抗频变特性的共模扼流圈宽频建模[J].电子元件与材料,2020,39(10):77-82.DOI:10.14106/j.cnki.1001-2028.2020.0448. [31]信金蕾,杜明星,王颖丽.基于通态漏源电压的SiC MOSFET结温估计方法[J].电力电子技术,2020,54(10):17-20. [32] Jiangyong Zhang, Mingxing Du, Lei Jing, Kexin Wei, William Gerard Hurley. IGBT Junction Temperature Measurements: Inclusive of Dynamic Thermal Parameters[J]. IEEE Transactions on Device and Materials Reliability, 2019, 19(2): 333-340. [33] Mingxing Du, Qingyi Kong, Ziwei Ouyang, Kexin Wei, William G. Hurley. Strategy for Diagnosing the Aging of an IGBT Module by ON-State Voltage Separation [J]. IEEE Transactions on Electron Devices,2019, 66(11): 4858-4864. [34] Lei Jing, Mingxing Du, Kexin Wei, William Gerard Hurley. A Health Monitoring Method for Bond Wires in IGBT Modules Based on Voltage Ringing Characteristics[J]. IEEE Transactions on Electron Devices, 2019, 66(9): 3953-3960 [35] Mingxing Du, Yu Tang, Mengchao Gao, Ziwei Ouyang, Kexin Wei, William Gerard Hurley. Online Estimation of the Junction Temperature Based on the Gate Pre-Threshold Voltage in High-Power IGBT Modules[J]. IEEE Transactions on Device and Materials Reliability, 2019, 19(3): 501-508. [36] Kexin Wei, Wenbai Wang, Zhen Hu, Mingxing Du. Condition Monitoring of IGBT Modules Based on Changes of Thermal Characteristics[J]. IEEE Access, 2019, 7:47525-47534. [37] Zhen Hu, Mingxing Du, Kexin Wei, William Gerard Hurley. An Adaptive Thermal Equivalent Circuit Model for Estimating the Junction Temperature of IGBT[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019, 7 (1):392-403. [38] Du Mingxing, Zhang Xing, Wei Kexin, Hurley William Gerard. An alternative method for conducted immunity tests using multiple CDNs[J].IEEE Electromagnetic Compatibility Magazine,2019, 8(1):54-58. [39] Mingxing Du, Qiuya Guo, Ziwei Ouyang, Kexin Wei, William Gerard Hurley. Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors[J].Case Studies in Thermal Engineering, 2019, 14:100492. [40] Qingyi Kong, Mingxing Du, Ziwei Ouyang, Kexin Wei and William Gerard Hurley. A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms[J]. Energies, 2019, 12(5), 851. [41] Qingyi Kong, Mingxing Du, Ziwei Ouyang , Kexin Wei and William Gerard Hurley. A Method to Monitor IGBT Module Bond Wire Failure Using On-state Voltage Separation Strategy[J]. Energies, 2019, 12(9),1791. [42] 岳亚静,杜明星,文星,魏克新.基于结温补偿的IGBT模块键合线失效监测方法[J].电力电子技术,2019,53(02):66-69. [43] 张宜涛,杜明星,魏克新.基于谐振理论的PCB电磁兼容优化设计方法[J].电力电子技术,2019,53(02):58-61. [44] 张江勇,杜明星,魏克新.IGBT模块结温变化下的电磁干扰特性研究[J].电力电子技术,2019,53(01):84-86+100. [45] Du Mingxing, Zhang Xing, Wei Kexin, Hurley William Gerard. An alternative method for conducting immunity tests in the industrial environment[J]. IEEE Electromagnetic Compatibility Magazine,2018, 7(3):46-50. [46] Ning An, Mingxing Du, Zhen Hu, Kexin Wei. A High-Precision Adaptive Thermal Network Model for Monitoring of Temperature Variations in Insulated Gate Bipolar Transistor (IGBT) Modules[J]. Energies, 2018, 11(3): 595. [47]李天辉,杜明星,张刚,魏克新.电动汽车动力电池组电磁干扰研究[J].电源技术,2018,42(03):361-364. [48]孙方超,杜明星,王文白,魏克新.一种自抗扰控制的永磁同步电机控制系统优化策略研究[J].制造业自动化,2018,40(03):37-38+74. [49]文星,杜明星,景雷,魏克新.一种新型的基于V_(ce-on)的IGBT模块结温实时估测法[J].电测与仪表,2018,55(19):106-111. [50]杭州,刘喆,王子龙,汪春华,杜明星.开关电源耦合衰减特性测试[J].安全与电磁兼容,2018(06):42-45. 部分会议论文： [1] Jinlei Xin,Lei Zheng,Qiqi Dai,Mingxing Du,Ziwei Ouyang,Enfei Zhou. Threshold Voltage Monitoring Method for SiC MOSFET Based on Body Diode Voltage under Body Effect[C].2021 IEEE 4th International Electrical and Energy Conference (CIEEC),Wuhan,China,2021 [2] Sanqiang Li, Mingxing Du. Extraction of parasitic parameters of IGBT module based on three - stage method[C]. 2018 Chinese Control and Decision Conference (CCDC), Shenyang, China, 2018. [3]Yuan Liu, Yi Dou, Mingxing Du, Kexin Wei, Hurley Gerard, Michael A. E. Andersen, Ziwei Ouyang. High Frequency Wide Output Range Boost-Flyback Converter with Zero Voltage Switching[C]. 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC), 2018, Shenzhen, China. [4] Juan Li, Mingxing Du, Xing Zhang, Kexi Wei. A Conducted Immunity Test Method Based on Electromagnetic Clamp Injection[C]. 2018 37th Chinese Control Conference (CCC), Wuhan, China. 部分专利： [1]杜明星，魏克新，岳有军，谢琳琳，胡震.一种IGBT模块内部键接线故障监测系统及其工作方法，2012-12-06，中国，CN102981098B（ [3]杜明星，郑琦琦，魏克新.一种有源门极控制电路, 2016-07-25，中国，CN201620809077.8 [3]杜明星，郑琦琦，魏克新. 一种有源门极控制电路及其IGBT电磁干扰抑制方法, 2016-07-25, 中国，CN201610608924.9 [4]杜明星，张兴，魏克新. 一种工业环境下的回路阻抗的测试设备及传导抗扰度测试方法，2018-02-05，中国，CN201810112643.3 [5]杜明星，田野, 王白文. 一种PMSM的可拓展电压空间矢量输出的FCS-MPDTC控制系统及方法，2019-07-11，中国，CN201910625376.4 [6]杜明星，赵相睿，董超. 一种基于电流能量考虑逆变器功率器件老化状态的在线监测方法，2022-02-16，中国，CN202210141095.3 [7]杜明星，赵相睿，董超. 一种基于线电压考虑逆变器功率器件老化状态的在线监测方法，2022-02-16，中国，CN202210140681.6 部分获奖 “大型输气管道高可靠性安全供电技术”获2016年度中国石油和化工自动化应用协会科技进步二等奖 |
